Bachelorstudium in Wirtschaftsingenieurwesen Elektrotechnik und Informationstechnik

Publications Semiconductor Optics Group

Nitride related publications 

Selected publications on Nitride based lasers and nanostructures

Last updated June, 2019

 

Spatially resolved Luminescence Properties of Non- and Semi-Polar InGaN Quantum Wells on GaN Microrods
J. Dühn, C. Tessarek, M. Schowalter, T. Coenen, B. Gerken, K. Müller-Caspary,
T. Mehrtens, M. Heilmann, S. Christiansen, A. Rosenauer, J. Gutowski, K. Sebald
J. Phys. D: Appl. Physics  51 (2018) 355102

 

The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots

E. Zakizade, S. Figge, C. Laurus, T. Mehrtens, A. Rosenauer, D. Hommel, J. Gutowski, and K. Sebald

Phys. Status Solidi B 254, 1600325 (2017).

 

Photonic crystal structures based on GaN ultrathin membranes

O. Volciuc, V. Sergentu, I. Tiginyanu, M. Schowalter, V. Ursaki, A. Rosenauer, D. Hommel, and J. Gutowski

Journal of Nanoelectronics and Optoelectronics, 9, 271 (2014).

 

Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures

B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R. Donfeu Tchana, S. Figge, J. Gutowski, D. Hänschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holý, T. Baumbach

Journal of Alloys and Compounds 585, 572 (2014).

 

The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

O. Volciuc, T. Braniste, I. M. Tiginyanu, M. A. Stevens-Kalceff, J. Ebeling, T. Aschenbrenner, D. Hommel, V. Ursaki and J. Gutowski

Appl. Phys. Lett. 103, 243113 (2013)

 

The impact of the discreteness of low-fluence ion beam processing on the spatial architecture of GaN nanostructures fabricated by surface charge lithography

I. M. Tiginyanu,O. Volciuc,M. A. Stevens-Kalceff,V. Popa, J. Gutowski, S. Wille, R. Adelung, H. Föll

Surface Engineering and Applied Electrochemistry 49, 1 (2013).

 

Optical properties of single InGaN quantum dots and their devices
K. Sebald, J. Kalden, H. Lohmeyer, and J. Gutowski
Phys. Status Solidi B 248, 1777 (2011).

 

Microphotoluminescence studies on GaN-based airpost pillar microcavities containing InGaN quantum wells and quantum dots
K. Sebald, H. Lohmeyer, J. Kalden, M. Seyfried, S. Figge, C. Kruse, H. Dartsch, C. Tessarek, D. Hommel, and J. Gutowski
Phys. Status Solidi B 248, 1756 (2011).

 

Composition mapping in InGaN by scanning transmission electron microscopy
A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, A. Avramescu, K. Engl, S. Lutgen
Ultramicroscopy 111, 1316–1327 (2011).

 

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel
Physical Review B 83, 115316 (2011).

 

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M.Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M .Feneberg, I. Tischer, K. Fujan, K. Thonke and D Hommel
Nanotechnology 22, 265202 (2011).

 

Optical properties of InGaN quantum dots in monolithic pillar microcavities
K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel, M. Florian, and F. Jahnke
Appl. Phys. Lett. 96, 251906 (2011)

 

Electroluminescence from isolated single indium gallium nitride quantum dot up to 150 K
J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski
8th International Conference on Nitride Semiconductors – ICNS 8
October 18-23, 2009 in Jeju, South Korea
phys. stat. sol. (a) 207 No. 6, 1428-1430 (2010)

 

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150K
J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski
Nanotechnology 21 No. 1, 015204 (2010)


Highly ordered catalyst- and mask-free GaN nanorods on r-plane sapphire
T. Aschenbrenner, C. Kruse, G. Kunert, S. Figge, K. Sebald, J. Kalden, T. Voss, J. Gutowski and D. Hommel
Nanotechnology 20 No. 7, 075604 – 075609 (2009)


Optical properties and modal gain of InGaN quantum dot stacks
J. Kalden, K. Sebald, J. Gutowski, C. Tessarek, T. Aschenbrenner, S. Figge, D. Hommel
International Workshop on Nitride Semiconductors
October 6-10, 2008 in Montreux, Switzerland
phys. stat. sol. (c) 6 No. S2, 590 – 593 (2009)
also available via arXiv.org


Optical properties of GaN nanorods grown catalyst-free on r-plane sapphire
K. Sebald, J. Kalden, T. Voss, J. Gutowski, T. Aschenbrenner, G. Kunert, C. Kruse, S. Figge, D. Hommel
International Workshop on Nitride Semiconductors
October 6-10, 2008 in Montreux, Switzerland
phys. stat. sol. (c) 6 No. S2, 578 – 581 (2009)


Influence of piezoelectric fields on excitonic complexes in InGaN quantum dots
K. Sebald, J. Kalden, S. Herlufsen, H. Lohmeyer, C. Tessarek, T. Yamaguchi, S. Figge, D. Hommel, J. Gutowski
phys. stat. sol. (c) 6 No.4, 872 – 875 (2009)


Optical Properties of Single and Multi-Layer InGaN Quantum Dots
K. Sebald, H. Lohmeyer, S. Herlufsen, J. Kalden, J. Gutowski, C. Tessarek, T. Yamaguchi, D. Hommel
7th International Conference of Nitride Semiconductors
September 16-21, 2007 in Las Vegas, Nevada, USA
phys. stat. sol. (c) 5 No.6, 1883 – 1885 (2008)


Integration of InGaN quantum dots into nitride-based microcavities
C. Kruse, S. Figge, H. Dartsch, C. Tessarek, D. Hommel, H. Lohmeyer, J. Kalden, K. Sebald, J. Gutowski
7th International Conference of Nitride Semiconductors
September 16-21, 2007 in Las Vegas, Nevada, USA
phys. stat. sol. (c) 5 No.6, 2320 – 2322 (2008)


On the way to InGaN quantum dots embedded into monolithic nitride cavities
K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, C. Kruse, D. Hommel, J. Wiersig, and F. Jahnke
Int. Workshop on Nitride Semiconductors, Kyoto, Japan, 2006
phys. stat. sol. (b) 244, 1806 (2007).


Optical Properties of Single InGaN Quantum Dots up to 150 K
K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel
4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006
phys. stat. sol. (c) 3, 3864 (2006).


A novel approach for the growth of InGaN quantum dots
T. Yamaguchi, K. Sebald, H. Lohmeyer, S. Gangopahyay, J. Falta, J. Gutowski, S. Figge, and D. Hommel
4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006
phys. stat. sol. (c) 3, 3955 (2006).


The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements
N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth
Nano Letters (2006). DOI: 10.1021/nl052456q


Resonant modes in monolithic nitride pillar microcavities
H. Lohmeyer, K. Sebald, J. Gutowski, R. Kröger, C. Kruse, D. Hommel, J. Wiersig, and F. Jahnke
European Physical Journal B 48, 291 - 294 (2005). PDF



Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures

K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel
MRS Fall Meeting 2005, Boston (USA)
Mater. Res. Soc. Symp. Proc. Vol. 892, FF25-02.1 (2006).


Epitaxial Growth of InGaN Quantum Dots Grown by MOVPE: Effect of Capping Process on Structural and Optical Properties
T. Yamaguchi, K. Sebald, J. Gutowski, S. Figge, and D. Hommel
MRS Fall Meeting 2005, Boston (USA)
Mater. Res. Soc. Symp. Proc. Vol. 892, FF11-01.1 (2006).


Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K
K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel
6th International Conference on the Physics of Nitride Semiconductors, Bremen (2005).
phys. stat. sol. (b) 243, 1661 (2006).


Crack-free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities
H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, and F. Jahnke
6th International Conference on the Physics of Nitride Semiconductors, Bremen (2005).
phys. stat. sol. (a) 203, 1749 (2006).


Microphotoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures
K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt, C. Roder, and D. Hommel
MRS Fall Meeting 2004, Boston (USA)
Mater. Res. Soc. Symp. Proc. Vol. 831, E5.3.1 (2005).


Microphotoluminescence of strongly localized states in InGaN/GaN layers - emission of quantum dots?
H. Lohmeyer, K. Sebald, J. Gutowski, S. Einfeldt, and D. Hommel
Int. Workshop on Nitride Semiconductors, Pittsburgh (USA) 2004
phys. stat. sol. (c) 2, No. 7, 2744-2747 (2005)

.
Influence of the Carrier Density on the Optical Gain and Refractive Index Change in InGaN Laser Structures
M. Röwe, P. Michler, J. Gutowski, V. Kümmler, A. Lell, V. Härle
5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003
phys. stat. sol. (a) 200, 135 (2003).


Influence of the Growth Kinetics on the Indium Distribution during MOVPE Growth of InGaN Quantum Wells
E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, F. Scholz, M. Vehse, J. Gutowski
5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003
phys. stat. sol. (c) 0, 2171 (2003).


Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures
M. Röwe, M. Vehse, P. Michler, J. Gutowski, S. Heppel, and A. Hangleiter
phys. stat. sol. (c) 0, 1860 (2003).


Excitons in Wide-Gap Semiconductors: Coherence, Dynamics, and Lasing
J. Gutowski, P. Michler, H. I. Rückmann, H. G. Breunig, M. Röwe, K. Sebald, T. Voss (invited)
Special Issue to the Honor of R. Zimmermann, phys. stat. sol. (b) 234, 70 (2002).


Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures
M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar, A. Lell, V. Härle
Int. Workshop on Nitride Semiconductors, Aachen (Germany) 2002
phys. stat. sol. (a) 194, 414 (2002).


Analysis of Gain Saturation Behavior in GaN Based Quantum Well Lasers
M. Vehse, J. Meinertz, O. Lange, P. Michler, J. Gutowski, S. Bader, G. Brüderl, H. A. Lell, V. Härle
Int. Workshop on Nitride Semiconductors, Aachen (Germany) 2002
phys. stat. sol. (c) 0, 43 (2002).


Influence of the barrier height on carrier recombination and transparancy density in GaN-based laser structures
M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle
Applied Physics Letters, 80, 755 (2002).


Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures
M. Röwe, P. Michler, J. Gutowski, S. Bader, B. Hahn, V. Kümmler, A. Weimar, A. Lell, and V. Härle
4th International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001
phys. stat. sol. (a), 188, No.1, 65-68 (2001).


Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures
M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle
4th International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001
phys. stat. sol. (a), 188, No.1, 109-112 (2001)


Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN:Mg
S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, T. Böttcher, S. Figge, S. Einfeldt, and D. Hommel
Forth International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001
phys. stat. sol. (b) 228, No.2, 379-383 (2001)


Influence of composition and well-width fluctuations on optical gain in (In,Ga)N multiple quantum wells
M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars
Semicond. Sci. Technol. 16, 406-412 (2001)


Optical gain and saturation in nitride-based laser structures
M. Vehse, P. Michler, O. Lange, M. Röwe, J. Gutowski, S. Bader, H.-J. Lugauer, G. Brüderl, A. Weimar, A. Lell, and V. Härle
Appl. Phys. Lett. 79, 1763-1765 (2001)


Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures
P. Michler, O. Lange, M. Vehse, J. Gutowski, S. Bader, B. Hahn, H.-J. Lugauer and V. Härle
3nd International Symposium on Blue Laser and Light Emitting Diodes, Zeuthen/Berlin, Germany, 6-10 March 2000
phys. stat. sol. (a) 180, 391 (2000)


Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg
S. Strauf, S. Ulrich, P. Michler, J. Gutowski, V. Kirchner, S. Figge, S. Einfeldt, and D. Hommel
Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 pp. 721-724 (2000)


Influence of barrier doping and barrier composition on optical gain in (In,Ga)N MQWs
M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, P. Ryder, S. Keller and S. P. DenBaars
Third International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, 1999
phys. stat. sol. (b) 216, 331 (1999)


Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaN grown by MBE
S. Strauf, P. Michler, J. Gutowski, U. Birkle, M. Fehrer, S. Einfeld, and D. Hommel
Third International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, 1999
phys. stat. sol. (b) 216, 557 (1999)


Studies on Carbon as alternative p-type dopant for GaN
U. Birkle, M. Fehrer, S. Strauf, S. Einfeldt, D. Hommel, P. Michler, and J. Gutowski
MRS Internet J. Nitride Semicond. Res. 4S1. G5.6 (1999)


Donor-acceptor-pair recombination for impurity identification and analysis of cubic inclusions in Mg- and C-doped MBE grown hexagonal GaN
S. Strauf, P. Michler, J. Gutowski, U. Birkle, S. Einfeldt, V. Kirchner, H. Heinke, and D. Hommel
Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan
Eds. A. Yoshikawa et al., Ohmsha Ldt. (Tokyo), p. 574 - 77, 1998


Excitonic Transitions in MBE Grown h-GaN with Cubic Inclusions
S. Strauf, P. Michler, J. Gutowski, H. Selke, U. Birkle, S. Einfeldt, and D. Hommel
Journal of Cryst. Growth 189/190, 682-686 (1998)